I2C FRAM MEMORY

The MR44V100A is a nonvolatile 131,072-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR44V100A is accessed using Two-wire Serial Interface ( I2C BUS ).Unlike SRAMs, this device, whose cells are nonvolatile, eliminates battery backup required to hold data. This device has no mechanisms of erasing and programming memory cells and blocks, such as those used for various EEPROMs. Therefore, the write cycle time can be equal to the read cycle time and the power consumption during a write can be reduced significantly.

The MR44V100A can be used in various applications, because the device is guaranteed for the write/read tolerance of 1012 cycles per bit and the rewrite count can be extended significantly.

Features

• 131,072-word × 8-bit configuration I2C BUS Interface
• A single 3.3 V typ. (1.8V to 3.6V) power supply
• Operating frequency:
  • 3.4MHz(Max) HS-mode
  • 1MHz(Max) F/S-mode Plus
• Read/write tolerance
  • 10(12) cycles/bit
• Data retention: 10 years
• Guaranteed operating temperature range: −40 to 85°C
• Low power consumption
  • Power supply current (@3.4MHz) 1.1mA(Max.)
  • Standby mode supply current
    • 10μA(Typ.)
    • 50μA(Max.)
  • Sleep mode supply current
    • 0.1μA(Typ.)
    • 2μA(Max.)
• Package options:
  • 8-pin plastic SOP (P-SOP8-200-1.27-T2K)
• RoHS (Restriction of hazardous substances) compliant